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Questions related from Premkumar Vincent
Does Sentaurus TCAD have the material model for aIGZO and poly-Si inbuilt (or found in some other resource)? Is it possible to simulate aIGZO and poly-Si based TFT using channel material...
19 January 2021 9,625 1 View
The intrinsic capacitances in a MOSFET can be simulated using TCAD's ac analysis solve statement. There are 16 total capacitances as provided in this link:...
10 December 2020 4,914 3 View
In MOSFET small signal analysis, we can relate charge (Q) and capacitance (C) using the formula Cij = dQi/dVj. Is the voltage term (dVj) calculated across the electrode terminals 'i' and 'j' ? Or...
16 October 2020 2,309 6 View
We can calculate Q from capacitance as Cij = dQi/dVij. When I input an ac signal through Gate electrode while the MOSFET is DC biased at gate and drain (source and body are grounded), I get Cbg,...
14 October 2020 3,483 0 View
May I know why most literature, including yours, use ITO/ETL/P3HT:PCBM/MoOx/Ag configuration instead of .../MoOx/Au configuration? Does MoOx/Ag have any workfunction advantage over MoOx/Au (Since...
28 May 2020 4,474 7 View
I want to do optical modelling with P3HT:PCBM solar cells. So how do I use AM1.5 optical source instead of the C interpreter in solarex07.in example? If I replace the C interpreter with...
09 July 2015 228 5 View