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I have designed a CMOS image sensor device in TCAD and need to convert its equivalent model in a SPICE simulator to obtain the overall read noise of the designed pixel with backend electronics....
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In order to simulate the effects of radiation damage on the dark current of a CMOS image sensor, I need to obtain the particle charge generation due to heavy-ions using a monte-carlo tool like...
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We infer from the above that the dark current generation rate of the photodiode is high in the depletion region. How?
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