12 Questions 23 Answers 0 Followers
Questions related from Ankur Goswami
How PLD and RF sputtering are different over each other ? Or why one should choose PLD over sputtering except depositing complicated oxides (e.g: super conductors or perovskites). It is well known...
13 October 2016 1,553 4 View
Hi I was wondering how carrier scattering varies with the defects in thin film semiconductors. For example if iii-V semiconductor grows on silicon substrate because of the lattice mismatch there...
03 May 2016 9,915 8 View
In case of cantilever made of uniform material(not bimaterial) should the natural frequency go up or drop down with the function of temperature? Any comment!
26 March 2016 356 7 View
Hi all, Does anybody have cif file of 1T structure of MoS2. As this structure is meta stable I am not getting the CIF file of the same in any standard database. 2H or 3R MoS2 are quite common and...
24 February 2016 5,693 11 View
Can band gap of semiconductor be found by UV spectroscopy. I do know people find it by Tauc plot or kulbeka-munk model. But how reliable it is if the semiconductor is crystalline. I am in a...
25 January 2016 9,696 26 View
Dear All, I am trying to measure surface charge of an electret by electrometer (keithley 6514)set up but I am getting a hard time. I have keithley 6514 meter with a triax cable. I have an...
28 October 2015 1,237 3 View
Hi All, Can power supply be used as a current source? The power supply which I have has CC and CV mode. However, if I want to use as a current source (CC mode) it adjusts per load and goes to...
10 October 2015 6,568 5 View
Has anybody tried friction measurement by AFM. I have a viscoelastic film on silicon. I would like to characterize the frictional force by AFM. Is viscoelastic properties can also be studied by...
28 January 2015 2,643 2 View
I was wondering if anybody would have tried surface charge measurement of teflon coated on silicon. We are making an electret film using teflon. The idea is a thin layer (250 nm) of teflon is...
20 May 2014 8,644 2 View
Can you share some information on that, like how he setup should be? What should be the voltage and current range should be used. Is there any requirement of vacuum in the chamber?
13 April 2014 9,491 2 View
I was struggling for last couple of weeks by varying various parameters of DRIE like SF6 , C2F4 flow rate, platen power(5 to 10W), ICP power (1000~3000W), vacuum (20~25 mtorr) but in none of the...
16 March 2014 758 5 View
Has anybody tried reactive ion etching on teflon coating? I have coated AF teflon solution on thermally grown Si and annealed at 250 deg C for 5 min to stick the teflon on the substrate....
12 January 2014 6,099 2 View
