I synthesized ZnO nanotube array via hydrothermal method and measured its photoluminescence (PL) property.
There are so many PL peaks (UV emission and vis emission).
UV emission peaks can be devided into two peaks: FX (free exciton) and DAP (donor acceptor pairs).The NBE emission (UV emission) peaks can be deconvoluted into FX and DAP peaks
My question is the FX peak position is affected by the defect concentration or types?
Dear Mj Kim
Similar kind report form Variable temperature photoluminescence of pulsed laser deposited ZnO thin films
The photoluminescence of ZnO thin films formed by reactive laser ablation of metallic zinc at different temperatures was studied. At cryogenic temperatures, free and bound exciton emissions are absent, and the close band edge (NBE) emission for the ZnO thin film deposited at room temperature is temperature independent. Defects are removed, exciton emission returns and a temperature-dependent NBE emission occurs after annealing at 700 °C. In terms of both spectra form and temperature dependence, the experimental results indicate that defects play an important role in band edge emission. Our findings will have an effect on ZnO device applications, especially optoelectronics that relies on exciton emission.
https://aip.scitation.org/doi/abs/10.1063/1.2970075?crawler=true&mimetype=application%2Fpdf&journalCode=jap
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