I am facing an issue of wire bonding, trying to ball bond Au wire onto a metal stack/semiconductor (Au/Ti/GaN).
Thickness of Au = 200 nm,
Thickness of Ti = 20 nm.
I observe that the metal stack comes off after the bonding process even at bonding temperatures of 200 deg C.
I have following queries:
(1) Will increasing the ultrasonic power and reducing the force help? This was suggested to me by someone and it was tried a couple of times but without any success.
(2) Are there any stud bumping processes other tha Au stud bumping, meaning are any other material wires being used for stud bumping other than Au (I haven't come across any until now)?
Any leads will be highly appreciated.
Thanks and Cheers!