In polycrystalline silicon, there is a potential notch at the grain boundary in between two grains with different orientations. At no bias, if someone draw the fermi-level, it splits at the grain boundary, why?
Muzaffar Imam
Dear, Behnam Farid
Thank You for your valuable inputs but still i have some doubt as in some literature, I have found that the fermi lvel are not at the same energy level for left and right grains of grain boundary. In one journals, left grain has orientation and right grain has orientation and the fermi level was little up in left grain as compared to right grain. I just want to know how?
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