Dear Rohit Nimje

welcome!

This question is very generic and to answer it one needs to study all other substrate materials for FETS.

I think from the principle point of view there is no universal material that can be used to produce all field effect transistors. It is so there is no ideal material but their are alternative materials which can be used as substrate with one or more merits than the others.

One can answer this question by determining the most appropriate material properties and the material which satisfy the most requested properties will be

most suitable one.

The properties of the substrate materials:

- High mobility of electrons or holes

- High field effect sensitivity for field effect conduction control

The material must be easy to accumulate with majority carriers, or deplete or inverse.

- Low interface states with the oxide or the insulating material of the MOS or the MIS capacitor.

- Low static charges at the interface

- Builds ohmic contacts with the source and drain metallic electrodes.

- In junction less MOSFETS which i think you intend here the substrate material must be semi insulating to affect very low off current. Then by the field effect its carrier concentration will easily modified by bate electric field.

- The material must be stable

- The material must be easily fabricated

- It must be easily available.

-It must be reproducible

I think the nanosheet will be materials with the more merits.

It is also suitable for large area display applications and or flexible electronics.

Best wishes

Dear Rohit Nimje

welcome!

This question is very generic and to answer it one needs to study all other substrate materials for FETS.

I think from the principle point of view there is no universal material that can be used to produce all field effect transistors. It is so there is no ideal material but their are alternative materials which can be used as substrate with one or more merits than the others.

One can answer this question by determining the most appropriate material properties and the material which satisfy the most requested properties will be

most suitable one.

The properties of the substrate materials:

- High mobility of electrons or holes

- High field effect sensitivity for field effect conduction control

The material must be easy to accumulate with majority carriers, or deplete or inverse.

- Low interface states with the oxide or the insulating material of the MOS or the MIS capacitor.

- Low static charges at the interface

- Builds ohmic contacts with the source and drain metallic electrodes.

- In junction less MOSFETS which i think you intend here the substrate material must be semi insulating to affect very low off current. Then by the field effect its carrier concentration will easily modified by bate electric field.

- The material must be stable

- The material must be easily fabricated

- It must be easily available.

-It must be reproducible

I think the nanosheet will be materials with the more merits.

It is also suitable for large area display applications and or flexible electronics.

Best wishes

The following link may provide a clear answer on why nanosheet MOSFETs are so important, highlighting also technological and processing factors.

https://spectrum.ieee.org/semiconductors/devices/the-nanosheet-transistor-is-the-next-and-maybe-last-step-in-moores-law

We should never forget that for a device to be useful in real applications, the factors to be considered go far beyond the simple physical model behaviour of a stand-alone component. In other words, a choise (of single module design and/or materials) which appears better than another for a specific electric behaviour, may be deeply detrimental when realising that the module has to be integrated in much, much more complex devices where topics like overall architecture, metal interconnections, dynamic performances, reliability and even industrial feasibility and cost are all relevant factors