A higher ID/IG ratio indicates more defects on graphene.

When graphene oxide (GO) is doped with nitrogen, the electronic properties of GO are modified, significantly increasing the conductivity of electrons and improving their electron donor properties. This could lead to a decrease in the ID/IG ratio, indicating a reduction in defects.

However, the specific effects of nitrogen and boron doping on the ID/IG ratio can depend on several factors, including the doping method, the concentration of dopants, and the specific properties of the graphene sample.