In general, it is known that for most materials, when the XPS peak becomes higher shift, it means strong bonding with oxidation, and conversely, when the electron concentration increases, it is known that it is referred to as lower shift.
However, in the case of many 2D MoS2 papers, on the contrary, it seems to be cited in the papers and talking. That is, when the main peaks of MoS2 become higher shifts, it is said that n-type doping.
A slightly ridiculous quote is that CVD MoS2 generally has more n-type doping, since there is usually more S vacancy than exfoliated MoS2. However, in some papers, when checking the peak shift of XPS, it is said that CVD MoS2 is more p-type doping because CVD MoS2 has a lower shift of XPS peak than exfoliated MoS2.
Really, if the XPS peak is lower shift in 2D MoS2, is p-doping correct? If so, how do you physically understand this bonding strength? As far as I know, normally, when increased electron density, it reduces the bonding strength, which induces lower shift of XPS peak. And this understanding is well fitted to many materials.