If we consider a standard CMOS inverter, when the input is logic 0, and the output is logic 1, the NMOS transistor is in its OFF state, and its drain junction is then the sensitive one. and it is affetcted by energetic particle and causes negative glitch vice versa for PMOS.
Why does drain is more sensitive region when transistor is in OFF state in soft error mechanism?
Dear Dr. Aryan Kannaujiya,
Please look over the exlanation of what you're looking for:
In the context of semiconductor devices and soft error mechanisms, the term "drain" usually refers to the terminal of a field-effect transistor (FET), such as a metal-oxide-semiconductor field-effect transistor (MOSFET). When a transistor is in the OFF state (i.e., not conducting current), the drain is considered a more sensitive region for certain soft error mechanisms, such as Single Event Upsets (SEUs), compared to other parts of the device.
Single Event Upsets (SEUs) are temporary errors that can occur in digital circuits due to the impact of ionizing particles, such as cosmic rays or alpha particles, on the semiconductor material. These particles can generate electron-hole pairs as they pass through the semiconductor material. In an OFF state transistor, the voltage across its drain and source terminals creates an electric field that can help accelerate the charge carriers generated by these ionizing particles. Here's why the drain can be more sensitive:
It's important to note that the sensitivity of different parts of a transistor to soft errors can vary based on factors such as transistor design, layout, technology node, and operating conditions. While the drain region can be more sensitive in some cases, the overall susceptibility to soft errors depends on a complex interplay of these factors. Design techniques, circuit hardening, and error detection and correction mechanisms are employed to mitigate the impact of soft errors on semiconductor devices.
- Badges
- Science topic
- Similar topics
- Mathematics
- Algebra
- Matrix