PTM 32 nm BSIM model level 54
With eldo simulations for I_on_n and I_on_p , I get good values for n transistor but extremely low values of Ion for p transistor.
e.g
1043 uA/um for n transistor
5.67 nA/um for p transistor
I changed few parameters in pmos model but still the result is weird.
command i used is:
.measure Ion_n MAX' -1 * Is (xnmos,mnfet)' ;
similar for p type. Can anyone help me who has overcome this problem?
There is a difference in minority charge carriers, which cause NMOS devices to be faster than PMOSs of the same size. NMOS channel current is defined by mobility of the electrons, while PMOS channel current is defined by mobility of the holes. This may result in (significant) difference in I_on even when V_ds and V_gs are the same.
However, there is a huge difference in your case, which suggests something else is going on causing this. A couple of things to check are:
- make sure the BULK terminal of PMOS is connected to VDD and the BULK of NMOS is connected to GND.
- note that V_gs of PMOS is inverse to V_ds of the NMOS at the same (or at least similar) current.
@Kittipong Tripetch, @Martin A Trefzer
Ok i will check it. I am using 22nm, 32 nm, 45 nm and 65 nm ptm cards to evaluate their Ion, Ioff and Vth. For this, eldo uses BSIM4.7 equations to calculate Ion, Ioff and Vth. Can someone tell me how can i findout the equations that Eldo simulator is using for calculations.
For instance, i am going through the manual but its a tough ask. Is there a direct way to examine which equations the simulator is using for calculations?
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