I think when you prepare embedded Si-QD you usually need a matrix with a larger bandgap, as silicon oxide, nitride or carbide. However, the fabrication techniques allowing for the preparation of such a composite, do not always produce a good quality matrix, such as a crystalline or even a stoichiometric material. Therefore the matrix contains defects, as an outcome of the process and not as a project choice..
thanks for your reply. Si-QD is hot topic but the progress is too low. The defects in matrix is big issue as well as the QD itself also has big issue, e.g. the surface defects of QD, and others issues. After reading many papers about QD, I do not think embedding Si-QD in a larger bandgap is good choice. If there is good quantum effect, why larger bandgap is needed.