I have synthesized barium hexaferrite by doping rare earth elements. I want to confirm the doping percentage in the synthesized sample. Please suggest to me a technique for the same.
You can do Hall measurement. You can get hall coefficient and calculate the career concentration. Measure both the sample with and without doping.
Foe analytical purposes are widely used SIMS method of analysis of trace of elements with high sensitivity on level of 0.0001% or 1 ppm (particle per million).
however, it is possible in vacuum chamber, and this method can be analise only surface layer of solids with depth 50 nm to 1000 nm. The dopant concentration of semiconductor doping is tested by depth profiling by using SIMS.(secondary ion mass spectrometry).
Riyaz Khan You can look at instrumental methods such as XRF or wet chemistry (ICP, AAS, colorimetric etc). XRF can work with dry samples. The wet chemistry routes generally involve dissolving the sample in an appropriate reagent.
I don't quite understand your phrase 'I have synthesized barium hexaferrite by doping rare earth elements'. Are you saying that you have barium ferrite that you're doping with rare earth elements? What level of dopant? Answers to the last question may guide you to an appropriate technique.
I guess a simple method to analyze the concentration of the dopant is by means of EDAX spectra. the EDAX spectra will help you to determine the purity of the sample.
The method of determination of concentration of impurities depends on the phase state of media or material such as solid or liquid or gaseous state. For gas media the mass spectrometers are used, for liquids the ICP spectrometers are used (plume evaporation and emission is detected), for solids the SIMS method is efficient for thin films or surface analysis, for bulk matherial the method of neutron activation analysis is efficient. Also, the analysis of traces of elements strictly depend on the element of doping. For laser spectroscopical methods it is required the special wavelengths which is equal to atomic optical transition energy of doping material. For solids the evaporation of material or its gasification may be suitable for further determination the signal from optical emission of atomic beams. Different methods requires various probes for analysis such as laser beam, ion gun, annealing of sample for thermodesorption or evaporators of solids.
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