I have simulated a Nanowire FET of 5nm diameter and oxide of 1.5nm thickness upon it I have created Ferroelectric material of thickness 2nm. I have tried multiple values. I have changed the thickness of FERRO material as well . I am using Ferro model.
Hysteresis depends on charge trapping/de-trapping at certain position of the device, say, at interface between active and insulator, therefore, better to understand your device first. Thickness does matter, however, process might tells you the insight of your device.
Sir i have tried to run the code regarding the tfet nanowire in Silvaco Example section.
But for some reason when I was changing the Temperature, the threshold voltage is not changing. it has been stuck to a particular value 0.69....
the code that i am using for extracting the threshold voltage is
extract name="vt" x.val from curve ((v."GATE"),log10(abs(i."DRAIN"))) where y.val=-7
can you please tell me if i am using the correct equation?
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