Dear Ankit,

To simulate any device you have to at first bias it properly other wise you will not get the required performance.

Concerning the the mosfet transistor to reach the breakdown region first you bias the gate at certain voltage in the cut off region VGS< Vth for the n-mos transistor. Even you can choose it equals Vth. then apply a voltage VDS ranging from zero to BVDS where BVDS is the breakdown voltage of the transistor. Also you must connect the the bulk to the source and connect the source to the ground of zero voltage. In your simulation you must include the suitable breakdown model. Silberher model may be the most appropriate for simulating MOS transistors.He is a famous pioneer in developing simulation models for the mos transistors. He developed a mos transistor simulator named MINIMOS and i myself used it. Please refer to:indico.cern.ch/getFile.py/access?contribId=36&sessionId=4..

In simulating the devices near their breakdown you must change the voltage with small increments because the current increases explosively with the voltage in this region. If you need more details you can contact Dr Mohamed Abou Elatta one of my coworkers who made these simulations at the email address : [email protected]

i wish you success.

Dear Ankit,

To simulate any device you have to at first bias it properly other wise you will not get the required performance.

Concerning the the mosfet transistor to reach the breakdown region first you bias the gate at certain voltage in the cut off region VGS< Vth for the n-mos transistor. Even you can choose it equals Vth. then apply a voltage VDS ranging from zero to BVDS where BVDS is the breakdown voltage of the transistor. Also you must connect the the bulk to the source and connect the source to the ground of zero voltage. In your simulation you must include the suitable breakdown model. Silberher model may be the most appropriate for simulating MOS transistors.He is a famous pioneer in developing simulation models for the mos transistors. He developed a mos transistor simulator named MINIMOS and i myself used it. Please refer to:indico.cern.ch/getFile.py/access?contribId=36&sessionId=4..

In simulating the devices near their breakdown you must change the voltage with small increments because the current increases explosively with the voltage in this region. If you need more details you can contact Dr Mohamed Abou Elatta one of my coworkers who made these simulations at the email address : [email protected]

i wish you success.

The link does not work... Can you please assist?

Hello Laurens ,

I swithced from silvaco to senturus tool.

Use all basic models with special Avalanche Ovanstream and band to band tunneling.