I am preparing oxide glasses (Silicon-phosphate) by melting and quenching method. I want to measure DC conductivity of the glass obtained after annealing. I am trying with Van der Pauw Four probe method. Are there any alternative or better ways to do the same?
Thank you!
Dear Amrit,
You did not mention the thickness of the glass or the oxide layers. We have used Lucas-Signatone four piont probe for the resistivity calculation. The thickness of the oxide layer on 1mm glass was one micron.
OR
You can use Hall effect will little heating to find the I-V data.
regards
Abul
Thank you Abul Hossion
I am using 1mm to 1.5 mm thickness of glass oxide.
Van Der Pauw should work for that thickness- you can do a surface four probe in a cross (current, perpendicular voltage) or a linear four-probe. See Shroder ASIN B01F9GKD1A .
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