I m trying deposit a water oxidation catalyst using PLD to make a thin film.So when we choose the semiconductor(n-Si) as the substrate for photoelectrochemical water splitting, do we have to select a degenerately doped semiconductor(with low resistivity) over non degenerately doped semiconductor(with high resistivity) as the light absorber of the PEC cell in order to maximize the photovoltage ?
Check this out
http://authors.library.caltech.edu/47525/1/9781849737739-00052.pdf
And this book (page 124) will help you.Try to find it
State-of-the-Art Program on Compound Semiconductors XLI and Nitride and Wide Bandgap Semiconductors for Sensors, Photonics and Electronics V: Proceedings of the International Symposia, Volume 2004
Good Luck!!
A space charge region is formed at the Silicon/Catalyst/Liquid junction. The higher the dopant concentration, the thinner the depletion region inside the Silicon (but the higher the total potential drop in that depletion region). This is an important point because ~only light absorbed in this 'active' region of the Silicon (the depletion region) will contribute photoexcited charges to the PEC performance. You require a certain thickness of 'active' silicon to absorb all the light you are shining onto it. You want a dopant concentration in the silicon that results in a large enough depletion width to absorb the majority of the light you are shining on the material.
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