Please i want to understand the relation between the oxygen vacancies and Curie temperature, and if oxygen vacancies can increase the Curie temperature in ferroelectrics.
You need to ask the right questions if you want the righ answers. You do not mention what kind of ferroeletric materials are you talking about? Bulk, thin film? HZO? BaTiO3? LiNbO3?.... you get the idea.
Take any ferroelectric oxide, or prepare a certain composition, by whatever technique you can. Let us say BaTiO3 by solid state reaction in a well oxidized atmosphere (atm. pressure). Now try to anneal several other BaTiO3 pellets/powders, in different annealing (preferably reducing) atmospheres, such as vacuum annealing at different temperatures, or annealing under a reducing ambient (such as N2, NH3, etc.,) and prepare them. Try to test all these powders by DSC (differential scanning calorimetry), and monitor the phase transition temp. and compare the results from different samples. This is the easiest experiment to do. Alternately if you have XPS etc, you can see if you can check about the oxygen vacancies.
In the literature there is a paper on LiNbO3, (by Ajay Dhar et al., )where LiNbO3 was anneled in vacuum at different temperatures to create oxygen vacancies, and the reslts were quite interesting. I don't have the full reference of this paper, but it was published somewhere between 1984-86, ry to check the literature.
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