The electrical conductivity of In2O3 films is due to a transport of electrons. The high n-type conductivity observed in In2O3 films results from their anion deficiency, which usually appears in the Form of oxygen vacancies in the crystal lattice. However, when In2O3 film is completely stoichiometric it can only be an ionic conductor. Such materials are of no interest as transparent conductors because of the high activation energy required for ionic conductivity. Real In2O3 films used for transparent conductors are hardly completely stoichiometric.
The above explanation reveals a way to improve the electrical properties of the In2O3 films, i.e. to prevent more oxygen incorporating into the films at the beginning of the film growth.
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