I study undoped CdTe substrates for applications in THz photoconductive emitters. The antennas fabricated on the substrate have been excited above the bandgap photon energy and biased by a high external bias field of ~50 kV/cm. The excess energy of generated free carriers in the Gamma valley is slightly lower (~0.92 eV) than that of the L valley (1.09 eV). I wonder what the main scattering mechanism in CdTe would be and what the likelihood of scattering electrons with excess energy at an applied bias field of 50 kV/cm would be. Thanks