Hello,
I am searching for the thickness-dependence of the electrical resistivity of thin ( 10 - 100 nm) SiOx films. So far, I found papers from the 1960s that state Fowler-Nordheim tunning into the conduction band is possible, but only for large applied voltages. In addition, 50 nm thin films were found to be too thick for direct electron tunneling. Hopefully someone knows more on this.
Kind regards
Philipp
Dear Philipp Selenschik,
See the following info link:
https://www.researchgate.net/post/How_could_I_get_the_resistivity_of_a_oxide_thin_films_200_nm_on_a_n-Si_substrate
SiO2 is insulator and posses very large electrical resistivity. When prepared in the thin film form thickness become in nano meter range and resistivity become very high. I would say be careful while making measurements on the sample having thickness very low by using the niddle like probe, it may poke the thin films and you may record the noisy and unrealistic data. For very high resistivity materials measurements of dielectric constant using impedance analyzer is recommended. If you really interested to measure resistivity I would recommend to use the very high input resistance digital multimeter while measuring voltage by applying the current in microamps range. Hope it will help you to get the data on your sample.
20 nm of SiO2 have about 50 atoms, the energy barrier for electron tunneling barrier is very high. The SiO2 resistivity is 10^15 Ohm cm to 10^17 Ohm cm. The resistance of 20 nm SiO2 is approximately 1000 GOhm / cm^2
A MOSFET transistor has a 5 - 10 nm layer of SiO2, thus the input impedance of a MOSFET is the resistance of that (5 nm to 20 nm) SiO2 layer
- Badges
- Science topic
- Similar topics
- Entomology
- Resistance