The type of doping or dopant, whether it will render an n-type or p-type, and concentration of dopant will affect the Fermi level, and therefore the work function. Typically, the Fermi level will be near the conduction band minimum (CBM) for the n-type semiconductivity (and therefore smaller work function - provided other parameters are not changing), and for p-type semiconductivity the Fermi level will be near to the valence band maximum VBM, (rendering a larger work function) of a given material. Higher concentration of a particular type of dopant will move the Fermi level closer to either the CBM or VBM, depending on the semiconductivity. The Fermi level will be positioned at the middle of the band gap for an intrinsic semiconductor where the concentrations of donors and acceptors are equal.

This is not a complete picture. I am sure other members will join the discussion and give detailed explanations.

Thanks sir

Dear Abhishek, Please go for the following article for more clarity and do the reverse referencing search.

Good work

https://pubs.rsc.org/en/content/articlelanding/2016/mh/c5mh00160a/unauth#!divAbstract

doping level can affect the number of dislocations