I never until now hear about "ferromagnetic semiconductors", as semiconductors in general have a paramagnetic or diamagnetic behaviour. In the other hand the term "diluted magnetic semiconductor" generally refers to a semiconductor doped with small fractions of magnetic elements such as iron, cobalt, etc. Depending on the preparation and other stuff the so called "diluted mangetic semiconductor" can present a ferromagnetic behaviour, wich can be originated because of segregation of a magnetic compound or not incorporation of the magnetic dopant to the semiconductor structure. In this case it is unfair can describe your system as "diluted magnetic semiconductor" or at least it is clear that the ferromagnetic behaviour is partly due to the segragated phase/not incorporated magnetic dopant. In the other hand if you can proof (or at least have hints) that the magnetic dopant was incoporated into the semiconductor structure, you can truly tag your systema as "diluted magnetic semiconductor" having the ferromagnetic behavoiur only originated by the "diluted magnetic" dopant inside the semiconductor and you can congratulate yourself and  make a good scientific article about it. Also if 

 Beside this, I have the intuition that (perhaps) a "ferromagnetic semiconductor" is "diluted magnetic semiconductor" with ferromagnetic behaviour. Please notice that se you can also have the case where the magnetic dopant is incorporated in the semiconductor but the magnetic response is paramagnetic.

GdN  - gadolinium nitride is an example of intrinsic (not dilute) ferromagnetic semiconductor (band gap about 0.9 eV, indirect). It means that you don't have to put magnetic dopant inside to make it ferromagnetic.

I remember that for V2O3, phase stability between semiconducting and metallic states has a contribution from the magnetic moment of the dopant species. I believe that you can find some references in the paper reference below that have a theoretical discussion.

Understanding doped vanadium oxide (V2O3) as a functional positive temperature coefficient material.      Hendrix, B. C.; Wang, X.; Chen, W.; Cui, W. Q.    Dep. Mater. Sci.,  Wuhan Univ. Technol.,  Wuhan,  Peop. Rep. China.    Journal of Materials Science:  Materials in Electronics  (1992),  3(2),  113-19.

Thanks for the examples of ferromagnetic (intrinsic) semiconductors!

I would second the colleagues above, it is a matter of definition. ferromagnetic semicondcutor is basically a ferromagnetic material behaving as a semicondcutor while the diluted ferromagnetic semiconductor is basically a semiconductor material which is doped by ferromagnetic doping atoms to inherit them ferromagnetic properties.

Dear Paul,

You asked about the difference between ferromagnetic semiconductors and diluted magnetic semiconductors. Technically talking, the dilute magnetic semiconductors (DMS) are a class of semiconductor materials, which allow for a high spin polarization. The DMS materials, like (Zn,Mn)Se or other Mn doped semiconductors, are paramagnetic (nonmagnetic) when no external magnetic field is applied. Such paramagnetic materials exhibit a giant spin splitting at low temperatures in the presence of magnetic field, which can be as large as 20meV in the conduction band. On the other hand, the so called ferromagnetic semiconductors (FMS) are displaying both semiconducting and ferromagnetic properties. The (III,Mn)V materials, such as (Ga,Mn)As and (In,Mn)As are examples of ferromagnetic semiconductors. Magnetism in such ferromagnets originates from Mn local moments. FMS materials can be also produced by introducing Fe magnetic impurities and Be double-donor atoms into InAs. The ferromagnetic (InFe)As films behaves as an n-type FMS. The material is free from the impurity band problem that complicates the theoretical interpretations of ferromagnetism in Mn-based FMSs.