What is the difference between a spin-FET and spin-MOSFET ?
Spin-MOSFET consists of a structure that is in the metal-oxide-semiconductor type of configuration. What is the difference in the operation of the two types of spin-controlled transistors ?
This paper below describes a new class of spin transistors referred to as spin metal-oxide-semiconductor field-effect transistors (spin MOSFETs). The possible device structures, and theoretically predicted device performance are presented. The spin MOSFETs can not only exhibit significant magnetotransport effect such as large magnetocurrent, but also satisfy important requirements for integrated circuit applications such as high transconductance, low power-delay product, and low off-current. The additional spin-related degree of freedom in controlling output currents makes the spin MOSFETs attractive building blocks for a nonvolatile memory cell and reconfigurable logic gates on spin-electronic integrated circuits. The experimental demonstration of a spin MOSFET is also presented.
The experimental demonstration of a spin MOSFET is also presented. Discover the world's research. ... ... Spin-FET differs from the conventional MOSFET in structure, as the conventional MOSFET has semiconductor material-based source and drain terminals, while spin-FET has ferromagnetic material-based source and drain electrodes [5]. Since there are various ferromagnetic materials like iron, cobalt and nickel, thus there is a choice of using the material of desired magnetic properties for a particular device [6] . ... ... In this paper, a novel double gate Spin-Field Effect Transistor (DG spin-FET) with indium phosphide (InP) as channel material is evaluated. ... When the magnetization configuration between the HMF source and drain is parallel (antiparallel), highly spin-polarized carriers...
A MOSFET is a subclass of FET. A FET is a field effect transistor. This can be a MOSFET, MESFET, MISFET, JFET or any one of numerous others. A FET works on the principle of a gate terminal changing the resistance between two other terminals (the source and drain) of the device based on a change in the field under the gate.
A MOSFET is a metal oxide field effect transistor. The MOS describes the gate configuration. It consists of a metal gate and an oxide insulator on top of the semiconductor. MOSFETs are broken down further into NMOS and PMOS to indicate which type of carrier flows in the channel, the region below the gate, when the transistor is conducting.
A MESFET is a metal semiconductor FET and uses just a Schottky barrier gate. A JFET is a junction FET and uses changes in the depletion layer of a p-n junction to modulate current. All FETs have a gate and a source and drain. All are planar devices and rely on horizontal current flow parallel to the surface of the semiconductor.
[A bipolar junction transistor or BJT, on the other hand, relies on vertical current flow perpendicular to the surface of the semiconductor.]
Len Leonid Mizrah Many many thanks for your reply. I Know about this paper already. Actually many of the reviewers are confused between the two types and that creates lots of problems.
The structure of the two devices is almost similar only difference being Spin-FET consists of ferromagnetic source and drain electrodes while Spin-MOSFET consists of Half metallic source and drain electrodes. Hence, incase of spin-FET the electrode capacitances with channel can be completely neglected but in case of spin-MOSFET there are significant capacitances. Hence, as far as power consumption is concerned Spin-FET will be efficient (as capacitances are less, thus power will be less) but as far as spin injection and spin filtering is concerned Spin-MOSFET will be much efficient (as half metallic electrodes like CrO2 have ~100% spin filtering efficiency).