21 August 2021 3 7K Report

I want to remove the photoresist after the lithography process.

I don't want to use a photoresist stripper or acetone.

So, I thought of a way to remove the photoresist by exposing the entire wafer surface and immersing it in a developer to remove the photoresist.

Does this affect device characteristics more adversely than using PR stripper or acetone?

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