In metal-doped semiconductor shows higher intensity than pure semiconductor.
Without knowing what your material is, I would check to see if you're getting a resonance Raman effect. (I searched ' "resonance Raman" semiconductor' on Google Scholar and got a bunch of relevant hits). If it is resonance Raman, then I would say that your metal doping is bringing your semiconductor band gap close enough to the match the excitation photon energy (from your laser, if you're working in the visible or NIR range).
In Cu doped SnO2 by Hydrothermal method. Intensity of peak will be increased than pure SnO2 for 5000C . but on heating above 9000C decreased intensity peak than SnO2 Material. Why ? what are possibility reasons?
Do you only obtain the increasing peak intensity after doping? Because, if I understand it correctly, you need a massive increase in temperature for your doping process. This can cause an annealing, which will result in less defects. Less defects means sharper (smaller FWHM) and more intense peaks in Raman spectra.
So the two questions I have:
1. Do you get the same effect without doping and just with heating?
2. What about the width of the peaks? Do they get sharper (smaller FWHM)?
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