these structure are based on semiconductor nanowires that most be interconnected in somehow to the get contacted and trabnfer electrons , but there are many deactrivating processes that can occurr at this level and the close proximity the many wires are . 

there is a big chance to have lots of Ohmkic losses, heat dissipation , recombination from neighboring wires, Hall effects , tunneling and so on 

What could you comment about other effects ?=

and what could you comment about avoid some of these drawbacking effects by the designd oand manufacturing of the device?

best regards 

Dr Pit Navarro 

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