these structure are based on semiconductor nanowires that most be interconnected in somehow to the get contacted and trabnfer electrons , but there are many deactrivating processes that can occurr at this level and the close proximity the many wires are .
there is a big chance to have lots of Ohmkic losses, heat dissipation , recombination from neighboring wires, Hall effects , tunneling and so on
What could you comment about other effects ?=
and what could you comment about avoid some of these drawbacking effects by the designd oand manufacturing of the device?
best regards
Dr Pit Navarro