A good starting point would be the excellent semiconductor database at the Ioffe institute.

http://www.ioffe.ru/SVA/NSM/Semicond/index.html

They list all the references for their data so if you look up the old papers in google scholar you could probably find newer/additional data by checking papers that cite those papers.

On another subject: you don't usually find the work function of semiconductors in databases. First, the WF of semiconductors highly depends on the doping - not just x,y but donors, acceptors and electronically active defects. Additionally, the WF also depends on the surface and other factors (i.e. crystal orientation, reconstruction) but there are ways to address the latter factors. A useful parameter which is typically more accessible would be the electron affinity of the semiconductor.

Hi Lior,

Many thanks for the useful link and explanation. Really appreciate your response.

From my calculations,

Eg(Al0.13Ga0.17In0.7Sb) = 0.4547 eV at room temperature (300 K). 

But possibly you might have to find some experimental data as well.

Hi Saroj,

Thanks for the info, how did you calculate the energy gap? I found one paper and I try to put same ratio and my energy gap calculation is 0.71eV, 

please see this paper

http://scitation.aip.org/docserver/fulltext/aip/journal/jap/52/11/1.328614.pdf?expires=1442853184&id=id&accname=2094521&checksum=80037BEF49570A95654B80B42D4B5510

if you have any information on how to calculate with changing ratios would be really helpful  if you can direct me.

I suppose the experimental results are hard to find.

Saroj, please see page 6615 of the paper for the formula of direct and indirect band gap calculations.

Mohsin,

The link is not opening. Could you write the details of the paper?

Saroj,

see this paper 

Zbitnew, K., Woolley, J. C.: J. Appl . Phys. 52 (1981) 6611.

do you have any information about other parameters i.e. Dielectric constant, effective masses and mobilities?