RRAM device consists M-I-M (Metal - Insulator - Metal) structure and in most of the RRAM device insulating layer plays important role in resistive switching between HRS (High Resistance state) and LRS (Low Resistance State).
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Dear Vidit Pandey ,
Hope you are well.
The comparison criteria between the different oxides are:
The ratio of the Ion/Ioff. As this ratio increases the device is better.
The value of the on current must be small for smaller power consumption.
The speed of transition from the on off to on state and vice versa.
The stability of device among the cycling among the sates.
The turn on voltage voltage, called also set voltage must be small to reduce the switching power of the memory.
Ease of manufacturing.
please see the paper in the link:
Article Resistive Switching Characteristics of MnOx-based ReRAM
Best wishes
Thanks Respected Professor Abdelhalim abdelnaby Zekry Sir, for your valuable and informatic answer.
and thanks to share article.
I will check all parameters, suggested by you.
Thanks again sir
Dash, C. S., and S. R. S. Prabaharan. "Science and Technological Understanding of Nano-ionic Resistive Memories (RRAM)." Nanoscience & Nanotechnology-Asia 9, no. 4 (2019): 444-461.
Thanks to respected Azeez Abdullah Barzinjy and Dr. Akhilesh Pandey
sir, for sharing informatic articles related to resistive switching memory devices (RRAM).- Badges
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