I am working on an example for InAs. The ultimate goal is to study the thermal properties from the phonons. But first, I must optimize the structure with VASP. It seems like a very easy calculation however the results from the paper I am following shows the lattice parameter to be 6.06 angs and my results show 6.21 angs. It is very crucial for me to be very good at optimizing my structure in order to get accurate results from the phonons. Below I will provide some info of my input files:
INCAR:
PREC = Accurate
ENCUT = 311 --> at least 30% above ENMAX from POTCAR
EDIFF = 1e-7
SYMPREC = 1e-6
IBRION = 1
NELMIN = 1
ISIF = 3
NSW = 99
ISMEAR = -5 -> semiconductor
KPOINTS:
MP - 11x11x11 k mesh
POTCAR:
psuedopotential -> PAW_PBE
POSCAR:
In As
1.0
0.000000000000 3.018000000000 3.018000000000
3.018000000000 0.000000000000 3.018000000000
3.018000000000 3.018000000000 0.000000000000
In As
1 1
Selective dynamics
Direct
0.000000000000 0.000000000000 0.000000000000
0.250000000000 0.250000000000 0.250000000000
It is very interesting to me that I start from a structure that is very close to the ideal structure and yet my results seem to get farther from the ideal lattice parameter. If anyone has some insight on this problem I would greatly appreciate it.