I am working on an example for InAs. The ultimate goal is to study the thermal properties from the phonons. But first, I must optimize the structure with VASP. It seems like a very easy calculation however the results from the paper I am following shows the lattice parameter to be 6.06 angs and my results show 6.21 angs. It is very crucial for me to be very good at optimizing my structure in order to get accurate results from the phonons. Below I will provide some info of my input files:

INCAR:

PREC = Accurate

ENCUT = 311 --> at least 30% above ENMAX from POTCAR

EDIFF = 1e-7

SYMPREC = 1e-6

IBRION = 1

NELMIN = 1

ISIF = 3

NSW = 99

ISMEAR = -5 -> semiconductor

KPOINTS:

MP - 11x11x11 k mesh

POTCAR:

psuedopotential -> PAW_PBE

POSCAR:

In As

1.0

0.000000000000 3.018000000000 3.018000000000

3.018000000000 0.000000000000 3.018000000000

3.018000000000 3.018000000000 0.000000000000

In As

1 1

Selective dynamics

Direct

0.000000000000 0.000000000000 0.000000000000

0.250000000000 0.250000000000 0.250000000000

It is very interesting to me that I start from a structure that is very close to the ideal structure and yet my results seem to get farther from the ideal lattice parameter. If anyone has some insight on this problem I would greatly appreciate it.

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