I am working on a lithography process using spr220-7 photoresist.
I want to know the etching method of spr220-7 photoresist. I want to have specific dosage parameters and etching rate. In addition, under this parameter, what is the etching rate for etching some commonly used substrates. For example: I directly spin coated a layer of spr220-7 photoresist on bf33, and I want to transfer the developed pattern of spr220-7 photoresist directly to bf33. What is the better method, the specific dosage parameters of this method, and the etching rate.
It all depends on your process and equipment setup, so there is no such a thing as specific and universal lithography parameters. Just use technical data sheet from Kayaku website as a starting point and optimize your process (eg. for dose/focus optimization do some Bossung curves, optimize hard bake temp./ramp/time for subsequent wet etching etc.). For shallow BF33 etch 5:1 BHF should be ok, but you may have some HF diffusion/resist adhesion loss issues during longer etching. You can also try SF6 based RIE (pretty high SiO2/resist selectivity).
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