In simulation of TFETS......most of the references out there refer to self consistent solution of continuity equation and possion equation for carrier statistics calculation.However, is there any problem in following the NEGF formalism used in normal MOSFETs as normal MOSFET and TFET are similar structures; one is N-i-N and the other one is P-i-N?
The final current will be calculated using band to band tunneling equations.
Device characterization may be classified into two main approaches.
1) The simplest approach which is based on the evaluated measurements for the device such as the DC characterization of the device and the two port parameters when mounting the device under small signal excitation. you can assume either lumped or distributed topology for the device and evaluate the elements of the topology from the evaluated measurements and this is the simplest approach and the CPU time for evaluation of the model parameters is very low.
2)The more hard one is the physical model approach which is based on solution of the continuity equation and Poisson equation for carrier statistics. You can follow up the same approach used in MOSFET for calculating this current. The approach needs massive CPU time but is more accurate compared with the first one.
Prof. S. EL-Rabaie
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