Dear Muzaffar,

welcome,

There are not only the recombination at the interface traps that is taken into consideration but also volume recombination is taken into consideration. It can so that the effective recombination rate will be dominated by te volume recombination rate for Nt at the interface smaller than 10^10/cm^2.

In addition you have to tell us which performance parameters of the solar cell is saturated below the given Nt.

Best wishes

Dear Muzaffar,

welcome,

There are not only the recombination at the interface traps that is taken into consideration but also volume recombination is taken into consideration. It can so that the effective recombination rate will be dominated by te volume recombination rate for Nt at the interface smaller than 10^10/cm^2.

In addition you have to tell us which performance parameters of the solar cell is saturated below the given Nt.

Best wishes

Dear Abdelhalim

Thank You for your valuable input. This is how my device is responding with interface trapping density (Nt).

From this result, it clearly shows below Nt=10^10 (/cm2) performance of solar cell gets saturated. Kindly help me out of this if possible.

Thank You

According to your simulation results the shortcircuit current Isc already saturated at Nst =10^12/cm^2. Also this is valid for the the opencircuit voltage Voc. The decrease of Nst below has very little effect on both parameters. But it is also noticed that the rate of increase of Voc With the decrease of Nst is much pronounced thanb that of Isc.

So, Nst in this range affects largely the reveres e saturation current Is. This can be easily seen from the relation:

Voc= nVt Ln Isc/ Is. So one can see that Is decreases much as Nst decreases.

The dark current as i said before is not limited only by surface recombination but also volume recombination. This in agreement with my first comment.

In order to confirm this scenario, you have to calculate the reverse saturation current as a function of Nst.

Best wishes

Dear Abdelhalim

Thank You Sir for your valuable answer.

Hello Muzaffar Imam,

I agree with Prof. Abdelhalim Zekry. However, if you are still unsure about the same, you may follow the following steps to identify the effect of interface traps. Please note that the following procedure won't give you the practical results but will help you enhance your understanding.

1. Turn off all types of bulk recombination.

2. Vary the interface traps from 1e0 to 1e16 /cm^2.

3. Run the simulations.

4. Check the output.

Here, interface recombination is the only recombination mechanism. Therefore, any other recombination mechanism cannot dominate. In this case, if you observe zero effect of Nt below 1e10 /cm^2, then there are two possibilities:

a) The recombination at the interface traps is negligible as compared to generation of the charge carriers in this regime.

b) Some equations are not considered properly in your simulations.

a) can be easily verified. Extract the rate of recombination from your simulation and compare it with the rate of generation of charge carriers. If the former one is non negligible, then you need to check if all the equations (mainly continuity equation) is properly considered in your simulation.

I hope that would be helpful.

Best regards

Sumanshu

Dear Sumanshu Agarwal Sir,

Thank You so much for your detailed information. Sir, I would like ask you one more thing, as you said about all equations to be checked properly (mainly continuity equation) but these all are in built in the model statement. How we can check those are properly taking in the simulation or not?

Dear Muzaffar,

Sorry for a delayed response. I was away for a while. Please check if the following addresses your concern.

I have worked with sentaurus. I believe silvaco and sentaurus handels the files and material properties in similar fashion (I heard the same from the researchers who used both the softwares). In sentaurus, you may tweek the parameters in a parametr file (the extension for the same is .par). To switch off, say radiative recombination, the corresponding parameter C is made zero. The same thing can be achieved from the main simulation script by calling recombination command with appropriate recombination model. You may check if something similar is available in silvaco. That should make your job easy.

Thanks

Sumanshu

Dear Sumanshu Agarwal Sir

its completely ok Sir. and thank you for the useful response. I will try accordingly.