In the context of semiconductors, Cu wire bonding refers to the process of using copper wires to make electrical connections between different components or layers within a semiconductor device. The susceptibility of Cu-Al intermetallic compounds (IMCs) to corrosion in Cu wire bonding can be influenced by various factors. Galvanic corrosion is a specific type of corrosion that occurs when two dissimilar metals are in contact with each other in the presence of an electrolyte.
When considering galvanic corrosion in Cu-Al IMCs during Cu wire bonding, the following elements need to be present for the effect to occur:
significantly differDissimilar Metals: Galvanic corrosion requires the presence of two dissimilar metals. In the case of Cu-Al IMCs, copper (Cu) and aluminium (Al) are the primary metals involved.
Electrolyte: An electrolyte, typically a conductive liquid or moisture, is needed to facilitate the flow of ions between dissimilar metals. Moisture or ionic contaminants present during the wire bonding process or in the operating environment can act as electrolytes.
Electrical Conductivity: Galvanic corrosion is an electrochemical process involving electron transfer. Therefore, there must be an electrical path between the dissimilar metals to allow for the electron flow.
Galvanic Potential Difference: The dissimilar metals must have a significant difference in their electrochemical potentials. This potential difference drives the galvanic corrosion process, with the more active (less noble) metal being preferentially corroded.
When Cu-Al IMCs are present in Cu wire bonding, galvanic corrosion can occur if the above conditions are met. The formation of Cu-Al IMCs can introduce potential differences and create localized galvanic cells. If moisture or electrolytes are present, these cells can accelerate the corrosion of the less noble metal (Al) within the IMC region.
Various measures can be taken to mitigate the galvanic corrosion effect, such as using protective coatings or barriers to isolate the dissimilar metals, minimizing exposure to moisture or corrosive environments, and selecting materials with similar electrochemical potentials to reduce the potential difference.
It's important to note that the specific details and susceptibility of Cu-Al IMCs to galvanic corrosion in Cu wire bonding can depend on factors such as the specific semiconductor device, bonding conditions, environmental conditions, and the presence of other materials or surface treatments. Conducting further research and experimentation specific to your semiconductor device and bonding process will provide more detailed insights.