How can one study self heating/hot electron effects in a MOS device in Sentaurus TCAD?

Which command exactly helps to extract thermal resistance in Sentaurus TCAD?

Ref: A new rounded edge fin field effect transistor for improving self-heating effects, Japanese Journal of Applied Physics 50 (12R), 124303, 2011.

---A new nanoscale and high temperature field effect transistor: Bi level FinFET, Physica E: Low-dimensional Systems and Nanostructures 44 (3), 654-658, 2011.

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