From simulation, the voltage across my mosfet (VDS) is constant at 2.9V at VDD = 7V and it increases to 8V at 12V. The MOSFET is designed to give 14A of drain current. For power dissipation which formula shall i use? Is it V*I (40.6W) or I2R (8mW ; from datasheet RDS is in mohm range).
Dear Manisha,
I think the following link will help you .
http://electronicdesign.com/boards/calculate-dissipation-mosfets-high-power-supplies
thanks
You must doubt the value of R_DS. The datasheet may say under what conditions is R_DS calculated.
Hello Pawan and Ravikumar,
Thank you for the response. I have gone yhrough the given link and also through the datasheet. In datasheet my Vgs and Id conditions are not there.
I wanted to know if Vds is equal to Vdd - Vload (where Vload is fixed) or Vload = Vdd - Vds (where Rds is fixed according to Vgs). My MOSFET is working in saturation region, and laser is connected as load. Also if we calculate Rds as Rds = Vds/Id.
Thanking in advance
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