I'm unable to find relevant journal article as specified above. I need Si 2p, C 1s and N 1s core XPS spectra studies to understand the chemical (and electronic)
structure of nitrogen doped 4H-SiC wafers. Thanks.
My friend check these articles
1. Wee, A.T.S., Li, K. and Tin, C.C., 1998. Surface chemical states on LPCVD-grown 4H-SiC epilayers. Applied surface science, 126(1), pp.34-42.
2. Velez-Fort, E. et al. Epitaxial graphene on 4H-SiC(0001) grown under nitrogen flux: Evidence of low nitrogen doping and high charge transfer. ACS Nano 6, 10893–10900 (2012).
3. Choi, I., Jeong, H.Y., Jung, D.Y., Byun, M., Choi, C.G., Hong, B.H., Choi, S.Y. and Lee, K.J., 2014. Laser-induced solid-phase doped graphene. ACS nano, 8(8), pp.7671-7677.
* Laser-induced solid-phase doped graphene.
* Epitaxial graphene on 4H-SiC(0001) grown under nitrogen flux: Evidence of low nitrogen doping and high charge transfer.
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