Indudhar Panduranga Vali

12 Questions 30 Answers 0 Followers

Questions related from Indudhar Panduranga Vali

What is the problem in fitting FTA doublets of 4H-SiC?

Dear All, Fano interference is usually observed between the zone-folded transverse acoustic (FTA) phonon modes and the electronic continuum in n-type 4H-SiC. In our n-type 4H-SiC samples, the FTA...

06 June 2018 2,964 3 View

Please share any journal article on XPS analysis of nitrogen doped 4H-SiC.

I'm unable to find relevant journal article as specified above. I need Si 2p, C 1s and N 1s core XPS spectra studies to understand the chemical (and electronic) structure of nitrogen doped 4H-SiC...

07 July 2017 5,923 2 View

How does tensile strain in the semiconductor influence Schottky junction properties?

I have done irradiation on SiC and noticed uniform tensile strain from XRD. How does this irradiation induced strain could influence Schottky junction properties? Thanks.

06 June 2017 9,576 5 View

In XPS, how to distinguish the surface oxidation of a metal and the metal oxidation in the interface of a metal/semiconductor contact?

The surface of a metal, say Al is easily oxidized. If we establish such a metal contact (of thickness < 20 nm) on n-Si, in which the native oxide is always present prior to deposition of Al. If...

03 March 2017 6,882 14 View

How to evaluate the surface density of states of semiconductors?

I'm a beginner, I would like to know about the evaluation of the surface density of states when the dopant concentration is known and/or unknown.

12 December 2016 838 4 View

Is there any experimental reference for the microscopic clusters of metal-semiconductor phases in Schottky contacts?

please share information on experimentally evidenced research article on the microscopic clusters of MS phases in Schottky contacts. thanks.

12 December 2016 2,365 1 View

Can we find any application of Schottky contacts having high series resistance?

Hi, The series resistance of the Schottky contact is of the order kilo-ohm. An order of current change has occurred when the voltage is increased to 1.5 V. Are there any applications of such...

08 August 2016 8,674 16 View

How to calculate strain for single crystal from XRD measurements?

I have done powder XRD (not single crystal XRD) measurements for single crystal substrate of different samples. I can see the peak shift after irradiation process. How to calculate strain induced...

05 May 2016 373 4 View

Could someone please elaborate determining a and c values for hexagonal crystal structure?

I have an intensity and 2θ data (10-80 degree) for n-type SiC which is having hexagonal structure. The sin2 θ values for first and second peaks are 0.098 and 0.422. I’m unable to see the standard...

04 April 2016 3,244 6 View

What is meant by forbidden reflection in X-ray diffraction?

Hi All, I have recently come to know that, few samples, for e.g., in Si (100) substrate, the reflection 200 is forbidden, even though there is a clear peak around 33 degrees. I have also learnt...

04 April 2016 2,929 18 View

Is it proper to use normal glass cutter to cut wafer/substrate materials?

Dear experts, Since wafers, for example, Si may have 100 or 111 or other orientation. Is it proper to cut such particularly oriented wafers using normal glass cutter? Is there any impact on the...

03 March 2016 3,391 7 View

How the angle integrated PES is differ from angle resolved PES. Which one is better for semiconductor wafers?

I would like to study the electronic structure of semiconductors using PES. which one would be the best possible option?

03 March 2016 6,279 3 View