01 January 1970 5 1K Report

I have a question from Darya Khanto to share here. Hope to have more experts feedback to his question and also benefit to others.

Prof: need suggestion

My device stucture is PIN 

ITO/NiOx/CsPbI2Br/ZnO/C60/Ag

NiOx(2-Methoxyethonal)

CsPbI2Br( DMSO)

ZnO %50 , IPA

C60( DCB)

Jsc is improved upto 15

before these solvent i use NiO in Ethonal and ZnO also in Ethonal

But Voc is still bad.

There is one reference below:

https://pubs.acs.org/doi/10.1021/jacs.7b13229

They have a similar device structure to Darya's, but they use FTO as an transparent electrode. The workfunction of FTO is diffetent from ITO. Therefore the device performance is very different. As Darya noticed that Voc is related to it.

Hope there are some feedback and also Darya's question could benefit for others.

Best wishes

Xuhua

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