Greetings to all,
I am currently working on the implementation of a Ka-band Low Noise Amplifier (LNA) using the EC2612-99F pHEMT device in Keysight ADS. As ADS does not directly provide Ka-band transistor models in its standard PDKs, I am using the available S2P (S-parameter) file for simulation. However, I understand that S-parameters alone are insufficient for evaluating linearity characteristics such as P1dB and IP3, since they represent only small-signal behavior.
I would like to know what alternative methods or modeling approaches can be used within ADS to obtain linearity measurements for such a transistor when a full nonlinear model is not available.
Your valuable insights or suggestions on how to proceed in this scenario would be greatly appreciated.
Thank you in advance.