Hello,
I am working on a project that requires connecting the top side of a SI polished-polished wafer with its bottom side. I have been using p-type Silicon since I do anodic bonding at the end of the microfabrication and it works at a lower temp than n-type silicon. I was wondering if anybody with experience in RIE-ICP could tell me if using p-type or n-type silicon affects the etching rate and the etching quality significantly?
Thanks
Reactive ion etching of silicon may depend on the conduction type of the etched materials. It may also depend on the its conductivity. This relies on the nature of the chemical reactions and their need to either electrons of holes.
For more information you can follow the thesis:https://thesis.library.caltech.edu/5846/2/MDH-Thesis-Rev1.pdf
Best wishes
hello,
what is the composition of the etchant of a weld sample of copper (brass+zinc) on stainless steel (316L Si)?
thank you in advance
dear Albert,
as long as resistivity is in the same range there should be no difference in etching with plasma.
regards.
- Badges
- Science topic
- Similar topics
- Physical Sciences
- Condensed Matter Physics
- Soft Matter
- Liquids