Dear Author,
My name is Paulius Gečys and I am working in the CIGS laser processing field for some time. I would like to ask about the paper “Next generation interconnective laser patterning of CIGS thin film modules”. In the paper in table1 you show module series resistance values in Ohm*cm units. Can these values be compared to the P2 scribe resistivity (ohms per scribe length unit)? Or it is the same?
Best regards,
Paulius Gečys
Center for Physical sciences and technology
Laser micro-processing technology laboratory
Savanoriu Ave. 231, Vilnius, Lithuania
Phone: +370 5 2644 868
Fax: +370 5 2602 317
http://ftmc.lt/en
Article Next generation interconnective laser patterning of CIGS thi...
Hi,
the values of the resistance is measured for solar cells modulus with a characteristic dimension of solar modulus.
The P2 process is divided only the CIGS absorber layer and thus P2 process represents no finishd solar cell. When n-contact (ZnO in most cases) on the CIGS layer is added and patterned, than the current flow can measured from one modulus with interconnected small solar cells.
Therefore, i don't think, that these values of resistance can be compared to the P2 scribe resistivity.
Best regards
J. Winter
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