Can you explain how to calculate minority carrier and majority carrier lifetimes of various direct bandgap and indirect bandgap semiconductors?
What is the procedure or formulas for the same?
dear colleague
after calculation, if you need interpretations, i would help you
regards
Prior to Hall and minority carrier lifetime measurements, the ECR-exposed samples, and the annealed and as-grown reference samples, all were etched to the same depth using identical processes. Following hydrogenation, all of the samples exhibited changes in their transport properties, including improved mobilities. The great effect on the minority carrier lifetimes, discussed below, we also believe that hydrogenation served to passivate the dislocations. The incorporated hydrogen would be more strongly bound on dangling bonds, such as those associated with dislocations, than on Hg vacancies or interstitial sites. Thus, if the hydrogen indiffuses largely along the dislocations, it presumably could easily be trapped by any dislocation dangling bonds.
About the majority carriers: Their concentration just depends on the doping level and on the temperature; there is no lifetime involved.
About the minority carriers: On which grounds do you want to calculate their lifetime; what kind of "input" do you have available? Do you have an ab-initio calculation in mind, or are there some experimental data? Please be more specific about this aspect.
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