Mechanism of ITO conductivity (Band gap change)?

Mohammad Abubakar Sadique @Mohammad_Abubakar_Sadique

10 October 2018 1 8K Report

Just to be clear, specially for ITO Sn doping will cause high n type semiconductor property in ITO, what happens at molecular level in ITO and how the band gap of 4eV changes to make it conductive??

Rafael Valentin Tolentino-Hernandez

Moleculary the substitution of 1 atom of In is replaced by 1 atom of Sn (irrespective of the site) leads to the formation of three impurity bands with s-like symmetry, one of these bands overlaps the conduction band of In2O3, and the Fermi level of ITO is located in this band, thus essentially accounting for the free-electron-like properties. a more complete description of this phenomenon must account for many-body effects such as electron-electron and electron-impurity scattering.

Regards.

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