In case of ITO it is transparent to visible light having band gap around 4eV. To make it conductive we need to reduce the band gap, which is done by introducing oxygen vacancy. I need to know what is the mechanism (chemistry/elemental)? In In2O3, Sn doping makes it highly n-type degenerate semiconductor. How is this doing done(mechanism)?
Put Copper block of considerable size in the furnace while synthesis of ITO.
Yes, I also suggest to use furnace annealing treatment with Cu block, it will help for oxygen deficiency. Try once and all the best
Typical way for oxygen deficit creation in solid-state chemistry is annealing of this compound in atmosphere with low PO2. In order to find out optimal PO2 and annealing temperature, it is necessary find in literature (or determine) the so-called P-T-x diagram. Since the "oxygen pumps" are rare and expensive (platinum is used for contacts) the easiest way is to anneal sample with a "getter". To obtain very low PO2 (the logarithm of PO2 is in the range of -20 ÷ - 30) titanium sponge in atmosphere of inert gas is usually used.
Thanks for all your input, I will go through some literature as well.
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