I am using molecular dynamics to study Ga interaction with Silicon. The simulations at low kV (1-5kV) with 0.1fs time-step works well and are in accordance with SRIM generated values. The simulations at 30kV, however, with time-step 0.1-0.002fs do not predict actual results (the Ga ions just passes through Si lattice and travel more than 100nm Si depth), potentially arising from interaction issues. I am using a combination of ZBL and tersoff potentials. Has anyone encountered such issue in their MD simulations? Any feedback or suggestion in this regard would be highly appreciated.
Regards,
Vivek