I would like to know if it is possible to have a uniform doping over 2 µm for n-type crystalline silicon, using the ion implantation technique, in order to create a BSF layer in a solar cell.
I thank you in advance for any information that can help me.
You should try to use TRIM/SRIM simulations to calculate the penetration depth.
The average penetration depth is about < 10 nm to 10 μ. The benefit of using ion implantation is the ability to implant any ion species into any substrate with a high level of control of location (in both lateral and depth) and composition.
Ion implantation is a low-temperature technique for the introduction of impurities (dopants) into semiconductors and offers more flexibility than diffusion. Ion implantation means implanting ions of nitrogen or carbon below the substrate surface ( the matrix ) to improve wear, oxidation and fatigue resistance. The modification of the target depends on the type of implanted ion, ion energy, ion beam current density, target temperature to the implant concentration in the sample. In MOS transistors, ion implantation uses to accurately adjust the threshold voltage. Ion implantation energies range from several hundred to several million electron volts with average depths
from < 10 nm to 10 . Doses range from 1011 atoms/cm2
for threshold adjustment to 1018 atoms/cm2 for buried dielectric formation.
Muhammad Shahbaz Anwar Thanks for the tip. I will try to work with it.
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