Dear respected researchers,
I have some query regarding ITO and FTO. I am writing details below :)
1.What is differences between ITO and FTO??
2. Which one is better as a TCO in solar cells?
3. Can we make tunneling junction with FTO ? Can you suggest an efficient fabrication route for using FTO as tunneling junction?
Thanks in advance :)
Hey Uday,
1. The main difference between the ITO and FTO is material and its properties. The thermal stability of ITO is low as compare to FTO. Also in ITO the presence of Indium can diffuse very easily with interface layer as compare to FTO.
2. Both type of TCO are frequently used for fabrication of solar cell. Both has its own importance because both TCO has its own device structure.Therefore most of the ITO based device have simple device structure as compare to the FTO based devices.
If you are looking forward to compare both TCO you should check the surface resistance and the transmittance of the TCO. At last cost also matter, FTO are much more cheaper than ITO.
3.There are several report on Schottky or Tunnel junction at TCO and semiconductor interface. In the case of FTO, the electron tunneling is a possible at the TiO2/FTO interface. for more detail you can have a look on FTO and ITO based tunnel junction articles, that are attached with this answer. Hope all these information will work for you.
Thank You
Hey Uday,
1. The main difference between the ITO and FTO is material and its properties. The thermal stability of ITO is low as compare to FTO. Also in ITO the presence of Indium can diffuse very easily with interface layer as compare to FTO.
2. Both type of TCO are frequently used for fabrication of solar cell. Both has its own importance because both TCO has its own device structure.Therefore most of the ITO based device have simple device structure as compare to the FTO based devices.
If you are looking forward to compare both TCO you should check the surface resistance and the transmittance of the TCO. At last cost also matter, FTO are much more cheaper than ITO.
3.There are several report on Schottky or Tunnel junction at TCO and semiconductor interface. In the case of FTO, the electron tunneling is a possible at the TiO2/FTO interface. for more detail you can have a look on FTO and ITO based tunnel junction articles, that are attached with this answer. Hope all these information will work for you.
Thank You
http://faculty.chemistry.harvard.edu/files/gordon/files/ccb_-_deposition_transparent_solar_cells_aipconfproc394p391997.pdf
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