Dear Dr Shiromani Balmukund Rahi ,

welcome!

We developed an new tunnel field effect transistor that is built from metal insulator metal channel structure while the passage of the electrons in the insulator is controlled by an an electric field produced by a gate electrode attached to the channel. To obtain full control one used double gate.

I think these transistors are not based on formation of junctions and channel inversion therefore they will not suffer as the classical mos transistors. They are much like the field effect in the vacuum tubes.

For more information about the MIM tunnel transistor please refer to the paper:

Conference Paper Theoretical investigation of single- and dual-gate metal ins...

Best wishes

Hello honorable Abdelhalim abdelnaby Zekry,

Your article "Theoretical investigation of single- and dual-gate metal insulator tunnel transistors" is very interesting. However, it is from 2003. Do you have newer research and results in this area.

Dear respected colleague Anton Georgiev ,

Wish you merry Christmas and happy new year!

Yes it is old paper but it is a basic one that shows by simulation the possibility of forming tunnel MIM transistors.

We studied also other more advanced types of tunneling transistors.

Please see the papers at the link:Article Influence of gate overlap engineering on ambipolar and high ...

we published also the paper in the paper:

Effect of asymmetrical double-pockets and gate-drain underlap on Schottky barrier tunneling FET: Ambipolar conduction vs. high frequency performance

A Shaker, M Ossaimee, A Zekry

Superlattices and Microstructures 96, 179-190

Hope these papers will be useful to you!

Best wishes

Hi Garima,

Let me share my opinion.

TFET is known for ultra low off current and high on/off current ratio.

However, it has much lower on current than MOSFET(including FinFET or GAA)

Bidirectional can boost on current, but not sufficient.

To boost on current, we need ultra sharp and trap-less junction at source/channel interface, thin EOT, and small contact resistance. Especially, ultra sharp junction is difficult to be processed.

In my opinion, TFET would not substitute MOSFET. But if there is a strong market demand such as ultra low power application, low operation voltage, or sub-Vt application, TFET might be used there.