Majority of low-power VLSI design research works discuss variety of power and delay models by making various assumptions such as gate-depth, and device parameters, transistor width, channel length, gate capacitance etc. In general, both power and delay are modeled as a function of supply and threshold voltages. Majority of the delay models rely on the power law model. while for power it is based on the leakage power and dynamic power models. usually dynamic power is approximated as 1/2*f*C*VDD^2.